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Same model may have multiple batches, images only for reference.
IRLI520NPBF Real Image
Same model may have multiple batches, images only for reference.

IRLI520NPBF

Part No IRLI520NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.1A TO220FP
Datasheet
IRLI520NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 017753-IRLI520NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI520NPBF CAD Model

Description

The Infineon Technologies IRLI520NPBF is an N-channel MOSFET with a maximum power dissipation of 30W (Tc) and a drain-source breakdown voltage of 100V.

  • Maximum Power Dissipation: 30W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.1A (Tc)
  • Maximum Rds On: 180 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0661 $58.6355
135+ $0.8743 $118.0305
205+ $0.8478 $173.7990
285+ $0.8201 $233.7285
365+ $0.7923 $289.1895
490+ $0.7103 $348.0470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,120 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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