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Same model may have multiple batches, images only for reference.
IRLIZ24N Real Image
Same model may have multiple batches, images only for reference.

IRLIZ24N

Part No IRLIZ24N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 55V 14A 3-Pin(3+Tab) TO-220FP / MOSFET N-CH 55V 14A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 480pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 26W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 61472-IRLIZ24N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRLIZ24
Introduction Date September 26, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRLIZ24N CAD Model

Description

The Infineon Technologies IRLIZ24N is a N-Channel MOSFET transistor that is commonly used in power management applications.

  • Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current: 14A @ 25°C
  • Maximum Power Dissipation: 26W
  • Maximum Rds On: 60 mOhm @ 8.4A and 10V
  • Case: TO-220AB Full-Pak
  • Maximum Gate-Source Voltage: ±16V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 15nC @ 5V
  • Status: Obsolete (EOL)

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