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Same model may have multiple batches, images only for reference.
K12A55D Real Image
Same model may have multiple batches, images only for reference.

K12A55D

Part No K12A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 12A TO-220SIS
Datasheet
K12A55D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 570 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070332-K12A55D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian K12A55D CAD Model

Description

The K12A55D is a MOSFET electronic component manufactured by Toshiba Semiconductor and Storage. It is a medium-popularity product that has a balanced supply and demand status. The Win Source Part Number of this product is 070332-K12A55D.

  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current: 12A (Ta)
  • Used in: various electronic devices and systems that require MOSFET technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.8979 $63.1832
18+ $6.4807 $116.6526
28+ $6.2786 $175.8008
39+ $6.0753 $236.9367
50+ $5.8732 $293.6600
66+ $5.2656 $347.5296
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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