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Same model may have multiple batches, images only for reference.
IRLIZ34NPBF Real Image
Same model may have multiple batches, images only for reference.

IRLIZ34NPBF

Part No IRLIZ34NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 22A TO220FP
Datasheet
IRLIZ34NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 1047563-IRLIZ34NPBF
Family Name IRLIZ34N
Introduction Date June 23, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLIZ34NPBF CAD Model

Description

The Infineon Technologies IRLIZ34NPBF is an N-channel MOSFET transistor that is commonly used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current: 22A @ 25°C
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 12A and 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Input Capacitance: 880pF @ 25V
  • Package: TO-220AB Full-Pak
  • Mounting: through a hole
  • Power Dissipation: 37W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Estimated EOL date: 2024

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