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IPU09N03LB G

Part No IPU09N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1046100-IPU09N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU09N03LB G CAD Model

Description

The Infineon Technologies MOSFET, with the Win Source Part Number 1046100-IPU09N03LB G, is a N-Channel polarity device with a Drain-Source Breakdown Voltage of 30V and a Continuous Drain Current @ 25°C of 50A (Tc).

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Drain Current: 50A (Tc) @ 25°C
  • Power Dissipation (Max): 58W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Gate Charge (Max): 13nC @ 5V
  • Input Capacitance (Max): 1600pF @ 15V
  • Gate-Source Voltage (Max): ±20V
  • Rds On (Max): 9.3 mOhm @ 50A, 10V
  • Package: PG-TO251-3
  • Mounting: Through Hole
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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