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IRLL014NPBF

Part No IRLL014NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 2A SOT223
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 140 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 135227-IRLL014NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLL014NPBF CAD Model

Description

The Infineon Technologies IRLL014NPBF is a N-channel MOSFET manufactured by Infineon Technologies.

  • Win Source Part Number: 135227
  • Mounting Type: SMD (SMT)
  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On: 140 mOhm @ 2A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 230pF @ 25V
  • Status: Not for New Designs
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.1769 $50.4165
605+ $0.1657 $100.2485
940+ $0.1601 $150.4940
1,345+ $0.1489 $200.2705
1,745+ $0.1433 $250.0585
2,180+ $0.1377 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,130 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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