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IRLL014NTRPBF

Part No IRLL014NTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 2A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 140 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017754-IRLL014NTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRLL014N
Introduction Date January 25, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRLL014NTRPBF CAD Model

Description

The Infineon Technologies IRLL014NTRPBF is an N-Channel MOSFET transistor that offers a drain-source breakdown voltage of 55V and a continuous drain current of 2A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 2A @ 25°C
  • Maximum Power Dissipation: 1W (Ta)
  • Maximum Rds On: 140 mOhm @ 2A and 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 230pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SOT-223

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1664 $50.7520
645+ $0.1558 $100.4910
1,000+ $0.1506 $150.6000
1,430+ $0.1400 $200.2000
1,855+ $0.1348 $250.0540
2,320+ $0.1295 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,620 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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