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IRLML6302TR

Part No IRLML6302TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description generation v technology | MOSFET P-CH 20V 780MA SOT-23
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 780mA
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Maximum) at Id, Vgs 600mOhm at 610mA, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 3.6nC at 4.45V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 97pF at 15V
Power Dissipation (Maximum) 540mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package Micro3/SOT-23
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1188589-IRLML6302TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLML6302TR CAD Model

Description

The IRLML6302TR is a P-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 540mW
  • Maximum Gate-Source Voltage: ±12V
  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 780mA
  • Gate Source Voltage(th) (maximum) @ Id: 1.5V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 3.6nC @ 4.45V
  • Input Capacitance (Ciss) (maximum) @ Vds: 97pF @ 15V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5283 $58.1130
230+ $0.4948 $113.8040
355+ $0.4781 $169.7255
505+ $0.4448 $224.6240
655+ $0.4280 $280.3400
820+ $0.4113 $337.2660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,520 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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