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IRLMS2002TRPBF

Part No IRLMS2002TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R / MOSFET N-CH 20V 6.5A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 1310pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 6.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(SOT23-6)
Dimension SOT-23-6
Win Source Part Number 017780-IRLMS2002TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRLMS2002
Introduction Date January 19, 2005
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IRLMS2002TRPBF CAD Model

Description

The Infineon Technologies IRLMS2002TRPBF is a high-performance MOSFET transistor, designed for SMD (SMT) mounting.

  • Polarity: N-channel
  • Maximum Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.5A (Ta) @ 25°C
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 6.5A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 22nC @ 5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3134 $50.1440
390+ $0.2572 $100.3080
605+ $0.2492 $150.7660
830+ $0.2411 $200.1130
1,075+ $0.2331 $250.5825
1,440+ $0.2090 $300.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,310 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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