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Same model may have multiple batches, images only for reference.
SI3441BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3441BDV-T1-E3

Part No SI3441BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.45A 6-TSOP
Datasheet
SI3441BDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 8nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 860mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 3.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028423-SI3441BDV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si3441BDV
Introduction Date March 28, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI3441BDV-T1-E3 CAD Model

Description

The SI3441BDV-T1-E3 by Vishay is a P-Channel MOSFET with a drain-source breakdown voltage of 20V.

  • Continuous Drain Current @ 25°C: 2.45A
  • Maximum Rds On @ Id,Vgs: 90 mOhm @ 3.3A, 4.5V
  • Category: discrete semiconductor product
  • Technology: MOSFET
  • Popularity: High
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1836 $57.8340
765+ $0.1513 $115.7445
1,195+ $0.1455 $173.8725
1,640+ $0.1409 $231.0760
2,120+ $0.1363 $288.9560
2,835+ $0.1224 $347.0040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,100 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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