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IRLMS5703TRPBF Infineon Technologies IRLMS5703TRPBF Real Image1 IRLMS5703TRPBF Real Image2
Same model may have multiple batches, images only for reference.
IRLMS5703TRPBF Infineon Technologies IRLMS5703TRPBF Real Image1 IRLMS5703TRPBF Real Image2
IRLMS5703TRPBF Infineon Technologies IRLMS5703TRPBF Real Image1 IRLMS5703TRPBF Real Image2
Same model may have multiple batches, images only for reference.

IRLMS5703TRPBF

Part No IRLMS5703TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.4A 6-TSOP
Datasheet
IRLMS5703TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 180 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6
Win Source Part Number 017781-IRLMS5703TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLMS5703TRPBF CAD Model

Description

The Infineon Technologies IRLMS5703TRPBF is a P-Channel MOSFET transistor designed for use in power management applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.4A @ 25°C
  • Maximum Power Dissipation: 1.7W @ Ta
  • Package: Micro6(TSOP-6)
  • Maximum Rds On: 180 mOhm @ 1.6A, 10V
  • Packaging: reel-TR
  • Mounting: SMD (SMT)

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