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Same model may have multiple batches, images only for reference.
SI4972DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4972DY-T1-GE3

Part No SI4972DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 10.8A 8-SOIC
Datasheet
SI4972DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.8A, 7.2A
Maximum Rds On at Id,Vgs 14.5 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1080pF @ 15V
Maximum Power Dissipation 3.1W, 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096049-SI4972DY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4972DY-T1-GE3 CAD Model

Description

The Vishay SI4972DY-T1-GE3 is a dual N-channel standard FET with a drain-source breakdown voltage of 30V and a continuous drain current of 10.8A @ 25°C.

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 28nC @ 10V
  • Maximum Rds On @ Id,Vgs: 14.5 mOhm @ 6A, 10V
  • Maximum Input Capacitance: 1080pF @ 15V
  • Commonly Used: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,400 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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