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Same model may have multiple batches, images only for reference.
IRFU3412PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFU3412PBF

Part No IRFU3412PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 48A I-PAK
Datasheet
IRFU3412PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 3430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047207-IRFU3412PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3412PBF CAD Model

Description

The Infineon Technologies IRFU3412PBF is a N-channel MOSFET transistor that is designed to provide high efficiency and low Rds On for power management applications.

  • Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 48A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 89nC @ 10V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 29A, 10V
  • Package: IPAK (TO-251)
  • Mounting: Through Hole
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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