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Same model may have multiple batches, images only for reference.
IRLR2908PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR2908PBF

Part No IRLR2908PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A DPAK
Datasheet
IRLR2908PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 1890pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069741-IRLR2908PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR2908PBF CAD Model

Description

The Infineon Technologies IRLR2908PBF is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 30A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Maximum Input Capacitance: 1890pF @ 25V
  • Maximum Rds On: 28 mOhm @ 23A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 120W (Tc)
  • Drive Voltage: 4.5V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8760 $52.5600
140+ $0.7188 $100.6320
220+ $0.6964 $153.2080
300+ $0.6739 $202.1700
385+ $0.6514 $250.7890
515+ $0.5840 $300.7600
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Availability: 18,130 pieces
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