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Same model may have multiple batches, images only for reference.
IRLR2908TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR2908TRLPBF

Part No IRLR2908TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A DPAK
Datasheet
IRLR2908TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 1890pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 144217-IRLR2908TRLPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRLR2908TRLPBF CAD Model

Description

The Infineon Technologies IRLR2908TRLPBF is a N-Channel MOSFET transistor that is commonly used in power management applications.

  • Drain-Source Breakdown Voltage: 80V
  • Maximum Continuous Drain Current: 30A @ 25°C
  • Maximum Power Dissipation: 120W
  • Maximum Rds On: 28 mOhm @ 23A and 10V
  • Package: D-Pak case
  • Maximum Gate-Source Voltage: ±16V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Popularity: medium popularity in the market
  • Power Management Applications: yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8760 $52.5600
140+ $0.7188 $100.6320
220+ $0.6964 $153.2080
300+ $0.6739 $202.1700
385+ $0.6514 $250.7890
515+ $0.5840 $300.7600
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Availability: 17,640 pieces
MOQ: 60 pcs
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