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Same model may have multiple batches, images only for reference.
IRLR3103PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3103PBF

Part No IRLR3103PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A DPAK
Datasheet
IRLR3103PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 138326-IRLR3103PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR3103PBF CAD Model

Description

The Infineon Technologies IRLR3103PBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 55A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 50nC @ 4.5V
  • Maximum Input Capacitance: 1600pF @ 25V
  • Maximum Rds On: 19 mOhm @ 33A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 107W (Tc)
  • Drive Voltage: 4.5V, 10V

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Quantity Unit Price Ext. Price
85+ $0.6217 $52.8445
200+ $0.5102 $102.0400
305+ $0.4942 $150.7310
420+ $0.4783 $200.8860
545+ $0.4623 $251.9535
725+ $0.4145 $300.5125
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Availability: 650 pieces
MOQ: 85 pcs
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