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Same model may have multiple batches, images only for reference.
IRLR3303TRR Real Image
Same model may have multiple batches, images only for reference.

IRLR3303TRR

Part No IRLR3303TRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A DPAK
Datasheet
IRLR3303TRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047600-IRLR3303TRR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR3303TRR CAD Model

Description

The Infineon Technologies IRLR3303TRR is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 68W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A (Tc)
  • Maximum Rds On: 31 mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Package: D-Pak TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply and Demand Status: Sufficient

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