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IRLR3714TRR

Part No IRLR3714TRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 20 V 36A (Tc) 47W (Tc) Surface Mount D-Pak
Manufacturer Infineon Technologies
Series HEXFET®
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package D-Pak
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 875258-IRLR3714TRR
Ultra Librarian 3D Model Ultra Librarian IRLR3714TRR CAD Model

Description

The IRLR3714TRR is a HEXFET® power MOSFET from Infineon Technologies, designed for a wide range of applications requiring efficient power switching. This logic-level MOSFET is optimized for low gate drive voltage, making it compatible with microcontrollers and other low-voltage control circuits. Its low on-state resistance and fast switching speed contribute to high overall system efficiency.

Applications

  • DC-DC Converters: Providing regulated voltage in various electronic systems.
  • Motor Control: Efficiently controlling the speed and torque of motors.
  • Power Management: Optimizing power consumption in portable devices.
  • Load Switching: Controlling power to various loads in automotive and industrial applications.
  • Lighting: Driving LEDs and other lighting systems.

Features

  • Logic-Level Gate Drive: Compatible with low-voltage control circuits.
  • Low On-State Resistance (RDS(on)): Minimizes conduction losses.
  • Fast Switching Speed: Reduces switching losses and improves efficiency.
  • Avalanche Rated: Withstands high voltage stress during switching.
  • Lead-Free: Environmentally friendly.

Benefits

  • Simplified Design: Logic-level gate drive simplifies interfacing with microcontrollers.
  • Increased System Efficiency: Low RDS(on) and fast switching speed reduce overall power losses.
  • Improved Reliability: Avalanche rating provides robustness against voltage spikes.
  • Reduced System Cost: High efficiency allows for smaller heat sinks and reduced component count.
  • Environmentally Friendly: Lead-free construction meets environmental regulations.

Additional Details

The IRLR3714TRR features a breakdown voltage of 20V and a typical on-state resistance of 7.3 mOhms at VGS = 4.5V. It is available in a D-PAK (TO-252) package. The logic-level gate drive requirement of this MOSFET makes it an ideal choice for applications where direct interfacing with microcontrollers or other low-voltage control circuits is necessary. Its low on-state resistance minimizes conduction losses, resulting in improved system efficiency. The fast switching speed further contributes to efficiency by reducing switching losses. The avalanche rating ensures that the MOSFET can withstand voltage spikes during switching, enhancing system reliability. The D-PAK package provides good thermal performance, allowing for efficient heat dissipation. Overall, the IRLR3714TRR offers a compelling combination of performance, reliability, and ease of use for a wide range of applications where logic-level gate drive and high efficiency are critical. The trench technology used in its construction further enhances its performance characteristics, contributing to its low on-state resistance and fast switching speed.

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