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Same model may have multiple batches, images only for reference.
IRLR3714ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3714ZPBF

Part No IRLR3714ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 37A DPAK
Datasheet
IRLR3714ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 7.1nC @ 4.5V
Max Input Capacitance 560pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047608-IRLR3714ZPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLR3714ZPBF CAD Model

Description

The Infineon Technologies IRLR3714ZPBF is an N-channel MOSFET designed for use in a wide range of applications in the electronics industry.

  • Maximum Power Dissipation: 35W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 37A
  • Gate Charge: 7.1nC @ 4.5V
  • Package: D-Pak
  • Maximum Rds On: 15 mOhm @ 15A and 10V

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22+ $5.3118 $116.8596
34+ $5.1467 $174.9878
47+ $4.9804 $234.0788
60+ $4.8140 $288.8400
81+ $4.3162 $349.6122
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