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Same model may have multiple batches, images only for reference.
IRLR3714ZTR Real Image
Same model may have multiple batches, images only for reference.

IRLR3714ZTR

Part No IRLR3714ZTR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 37A DPAK
Datasheet
IRLR3714ZTR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 7.1nC @ 4.5V
Max Input Capacitance 560pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047607-IRLR3714ZTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR3714ZTR CAD Model

Description

The Infineon Technologies 1047607-IRLR3714ZTR is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 35W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 37A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 7.1nC @ 4.5V
  • Maximum Input Capacitance: 560pF @ 10V
  • Maximum Rds On at Id,Vgs: 15 mOhm @ 15A, 10V
  • Package: D-Pak
  • Mounting: SMD (SMT)

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Quantity Unit Price Ext. Price
8+ $7.3343 $58.6744
20+ $6.0187 $120.3740
30+ $5.8304 $174.9120
41+ $5.6422 $231.3302
53+ $5.4539 $289.0567
71+ $4.8903 $347.2113
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