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Same model may have multiple batches, images only for reference.
IRLR3715PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3715PBF

Part No IRLR3715PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 54A DPAK
Datasheet
IRLR3715PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1060pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047610-IRLR3715PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR3715PBF CAD Model

Description

The Infineon Technologies IRLR3715PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 54A at 25°C.

  • Maximum Power Dissipation: 3.8W (Ta), 71W (Tc)
  • Maximum Rds On: 14 mOhm @ 26A, 10V
  • Case/Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Maximum Input Capacitance: 1060pF @ 10V

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