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Same model may have multiple batches, images only for reference.
IRF7452QTRPBF
Same model may have multiple batches, images only for reference.

IRF7452QTRPBF

Part No IRF7452QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.5A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 930pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 59953-IRF7452QTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7452QTRPBF CAD Model

Description

The Infineon Technologies IRF7452QTRPBF is a N-Channel MOSFET, which is widely used in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 4.5A @ 25°C
  • Maximum Power Dissipation: 2.5W (Ta)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Max Gate Charge: 50nC @ 10V
  • Maximum Rds On @ Id,Vgs: 60 mOhm @ 2.7A, 10V
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Commonly Used: Yes
  • Popularity: High
  • Supply and Demand Status: Balanced
  • Estimated EOL date: Not available

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475+ $0.2437 $115.7575
740+ $0.2356 $174.3440
1,020+ $0.2275 $232.0500
1,310+ $0.2206 $288.9860
1,755+ $0.1975 $346.6125
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