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Same model may have multiple batches, images only for reference.
IRLR3915TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3915TRPBF

Part No IRLR3915TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
IRLR3915TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 1870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017802-IRLR3915TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3915TRPBF CAD Model

Description

The Infineon Technologies IRLR3915TRPBF is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 30A
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: D-Pak
  • Power Dissipation (max): 120W (Tc)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1083 $55.4150
110+ $0.9094 $100.0340
175+ $0.8810 $154.1750
235+ $0.8526 $200.3610
305+ $0.8242 $251.3810
410+ $0.7389 $302.9490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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