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Same model may have multiple batches, images only for reference.
IRLR7811WCPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7811WCPBF

Part No IRLR7811WCPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 64A DPAK
Datasheet
IRLR7811WCPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 2260pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047626-IRLR7811WCPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automation & Process Control
Ultra Librarian 3D Model Ultra Librarian IRLR7811WCPBF CAD Model

Description

The Infineon Technologies IRLR7811WCPBF is an N-Channel MOSFET that features a drain-source breakdown voltage of 30V, a continuous drain current of 64A @ 25°C, and a maximum power dissipation of 71W.

  • Package: D-Pak
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On: 10.5 mOhm @ 15A and 10V
  • Application: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Common Use: Automation and Process Control

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