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Same model may have multiple batches, images only for reference.
IRLR7833PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7833PBF

Part No IRLR7833PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 140A DPAK
Datasheet
IRLR7833PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 4010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 103289-IRLR7833PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial
Ultra Librarian 3D Model Ultra Librarian IRLR7833PBF CAD Model

Description

The Infineon Technologies IRLR7833PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 140A at 25°C.

  • Maximum Power Dissipation: 140W (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Package: D-Pak package
  • Maximum Rds On at Id, Vgs: 4.5 mOhm @ 15A, 10V
  • Applications: Used in power management, computers & computer peripherals, communications & networking and industrial applications

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Quantity Unit Price Ext. Price
90+ $0.5715 $51.4350
215+ $0.4690 $100.8350
335+ $0.4543 $152.1905
455+ $0.4397 $200.0635
590+ $0.4250 $250.7500
790+ $0.3810 $300.9900
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