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Same model may have multiple batches, images only for reference.
IRLR8103
Same model may have multiple batches, images only for reference.

IRLR8103

Part No IRLR8103
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 89A D-PAK / N-Channel 30 V 89A (Ta) 89W (Ta) Surface Mount D-Pak
Datasheet
IRLR8103 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 89A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 5 V
Vgs (Max) ±20V
Power Dissipation (Max) 89W (Ta)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 75 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875261-IRLR8103
Ultra Librarian 3D Model Ultra Librarian IRLR8103 CAD Model

Description

The IRLR8103 is an N-channel MOSFET transistor from the HEXFET® series by Infineon Technologies.

  • Series: HEXFET®
  • Transistor Type: N-channel MOSFET
  • Package: Tube
  • Package Quantity: 75 pcs
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 89A @ 25°C
  • On-State Resistance (Rds On): 7mOhm @ 15A and 10V gate-source voltage (Vgs)
  • Gate Charge (Qg): 50nC @ 5V
  • Temperature Range: -40°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
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Availability: 1,230 pieces
MOQ: 65 pcs
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