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IRLR8256PBF

Part No IRLR8256PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 81A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1470pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205483-IRLR8256PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR8256PBF CAD Model

Description

The Infineon Technologies IRLR8256PBF is a MOSFET that is designed to provide high performance in various applications.

This product is popular among users who require limited supply and demand. The product is suitable for use in various applications, including those that require high power dissipation. The product is mounted using SMD (SMT) technology and is packaged in a D-Pak case. The product has various features, including a drain-source breakdown voltage of 25V and a continuous drain current of 81A (Tc). The product is ideal for users who need high-quality electronic components that are reliable and efficient.

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