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IRLR8503TRPBF

Part No IRLR8503TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 44A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 140440-IRLR8503TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR8503TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a powerful and efficient electronic component that comes with a medium popularity in the market.

It is an obsolete (EOL) product that is perfect for various applications. The product features a D-Pak case and package, with a TO-252-3, DPak (2 Leads + Tab), SC-63 dimension. The maximum drain-source breakdown voltage of this product is 30V, and it can handle a continuous drain current of 44A @ 25°C. The gate-source threshold voltage is 3V @ 250μA, and the maximum gate charge is 20nC @ 5V. The maximum input capacitance is 1650pF @ 25V, and the maximum Rds On @ Id,Vgs is 16 mOhm @ 15A, 10V.

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