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Same model may have multiple batches, images only for reference.
IRLR8721PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR8721PBF

Part No IRLR8721PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 65A DPAK
Datasheet
IRLR8721PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1030pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069759-IRLR8721PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR8721PBF CAD Model

Description

The Infineon Technologies IRLR8721PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 65A @ 25°C.

  • Maximum Power Dissipation: 65W (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Mounting: D-Pak package
  • Maximum Rds On: 8.4 mOhm @ 25A, 10V
  • Status: Obsolete (EOL)

The IRLR8721PBF is used in limited applications.

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85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
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