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IRLR8726PBF

Part No IRLR8726PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 86A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 2150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205484-IRLR8726PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR8726PBF CAD Model

Description

The Infineon Technologies IRLR8726PBF is an N-channel MOSFET that is designed for use in various applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 86A (Tc) @ 25°C
  • Maximum Rds On: 5.8 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Package: D-Pak case
  • Mounting: SMD (SMT) technology
  • Maximum Power Dissipation: 75W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1062 $50.4450
1,010+ $0.0995 $100.4950
1,565+ $0.0961 $150.3965
2,240+ $0.0894 $200.2560
2,910+ $0.0860 $250.2600
3,630+ $0.0827 $300.2010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 136,720 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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