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Same model may have multiple batches, images only for reference.
IRLR8726PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLR8726PBF

Part No IRLR8726PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 86A DPAK
Datasheet
IRLR8726PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 2150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205484-IRLR8726PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR8726PBF CAD Model

Description

The Infineon Technologies IRLR8726PBF is an N-channel MOSFET that is designed for use in various applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 86A (Tc) @ 25°C
  • Maximum Rds On: 5.8 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Package: D-Pak case
  • Mounting: SMD (SMT) technology
  • Maximum Power Dissipation: 75W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1062 $50.4450
1,010+ $0.0995 $100.4950
1,565+ $0.0961 $150.3965
2,240+ $0.0894 $200.2560
2,910+ $0.0860 $250.2600
3,630+ $0.0827 $300.2010
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MOQ: 475 pcs
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