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Same model may have multiple batches, images only for reference.
IRLS3034TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLS3034TRLPBF

Part No IRLS3034TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A D2PAK
Datasheet
IRLS3034TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 162nC @ 4.5V
Max Input Capacitance 10315pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047648-IRLS3034TRLPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLS3034TRLPBF CAD Model

Description

The Infineon Technologies IRLS3034TRLPBF MOSFET is an N-Channel electronic component that is designed to offer a maximum drain-source breakdown voltage of 40V.

  • Continuous Drain Current: 195A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Package: D2PAK
  • Maximum Power Dissipation: 375W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 1.7 mOhm @ 195A, 10V
  • Status: Active

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