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IRLS3036TRLPBF

Part No IRLS3036TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 140nC @ 4.5V
Max Input Capacitance 11210pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 165A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083615-IRLS3036TRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRLS3036
Introduction Date December 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRLS3036TRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component with a D2PAK case/package and a dimension of TO-263-3, D2Pak (2 Leads + Tab), TO-263AB.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 195A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 140nC @ 4.5V
  • Maximum Rds On: 2.4 mOhm @ 165A, 10V
  • Power Dissipation: 380W (Tc)
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1507 $51.6168
57+ $1.7647 $100.5879
88+ $1.7096 $150.4448
121+ $1.6544 $200.1824
157+ $1.5993 $251.0901
210+ $1.4338 $301.0980
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Availability: 9,593 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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