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Same model may have multiple batches, images only for reference.
IRLSL3034PBF Real Image
Same model may have multiple batches, images only for reference.

IRLSL3034PBF

Part No IRLSL3034PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A TO262
Datasheet
IRLSL3034PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 162nC @ 4.5V
Max Input Capacitance 10315pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047660-IRLSL3034PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLSL3034PBF CAD Model

Description

The IRLSL3034PBF is a N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Power Dissipation: 375W
  • Drain-Source Breakdown Voltage: 40V
  • Current Rating: 195A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 162nC @ 4.5V
  • Maximum Input Capacitance: 10315pF @ 25V
  • Package: TO-262
  • Operating Temperature: -55°C to 175°C

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Quantity Unit Price Ext. Price
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19+ $6.3467 $120.5873
29+ $6.1481 $178.2949
39+ $5.9506 $232.0734
51+ $5.7519 $293.3469
68+ $5.1571 $350.6828
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Availability: 4,080 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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