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Same model may have multiple batches, images only for reference.
IRLU014N Real Image
Same model may have multiple batches, images only for reference.

IRLU014N

Part No IRLU014N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 10A I-PAK
Datasheet
IRLU014N Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.9nC @ 5V
Max Input Capacitance 265pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047663-IRLU014N
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLU014N CAD Model

Description

The Infineon Technologies IRLU014N is a N-Channel MOSFET transistor.

  • Mounting Type: Through-Hole
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current (25°C): 10A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 7.9nC @ 5V
  • Maximum Rds On (Id, Vgs): 140 mOhm @ 6A, 10V
  • Case/Package: I-Pak

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