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Same model may have multiple batches, images only for reference.
IRLU2905ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLU2905ZPBF

Part No IRLU2905ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
IRLU2905ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 017814-IRLU2905ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLU2905ZPBF CAD Model

Description

The Infineon Technologies IRLU2905ZPBF MOSFET is a N-Channel polarity electronic component designed for use in Discrete Semiconductor Products.

  • Maximum Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Input Capacitance: 1570pF @ 25V
  • Package: IPAK (TO-251)
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: Active

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