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Same model may have multiple batches, images only for reference.
IRLU3714Z Real Image
Same model may have multiple batches, images only for reference.

IRLU3714Z

Part No IRLU3714Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 37A I-PAK
Datasheet
IRLU3714Z Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 7.1nC @ 4.5V
Max Input Capacitance 560pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047680-IRLU3714Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLU3714Z CAD Model

Description

The Infineon Technologies IRLU3714Z is an N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 37A (Tc)
  • Maximum Power Dissipation: 35W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: I-Pak
  • Packaging: tube/rail
  • Supply and Demand Status: sufficient

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