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Same model may have multiple batches, images only for reference.
IRLU4343PBF
Same model may have multiple batches, images only for reference.

IRLU4343PBF

Part No IRLU4343PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 26A I-PAK
Datasheet
IRLU4343PBF Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 50 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 75 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 161671-IRLU4343PBF
Ultra Librarian 3D Model Ultra Librarian IRLU4343PBF CAD Model

Description

The IRLU4343PBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • For Use In: Discrete Semiconductor Products, specifically in transistors and FETs
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id) @ 25°C: 26A
  • Maximum On-Resistance (Rds On): 50mOhm @ 4.7A and 10V
  • Gate Charge (Qg): 42nC @ 10V
  • Input Capacitance (Ciss): 740pF @ 50V
  • Mounting Type: Through-hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Temperature Range: -55°C to 175°C
  • Status: Obsolete

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