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Same model may have multiple batches, images only for reference.
IRLZ24NSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ24NSTRLPBF

Part No IRLZ24NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 18A D2PAK
Datasheet
IRLZ24NSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 480pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047698-IRLZ24NSTRLPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLZ24NSTRLPBF CAD Model

Description

The Infineon Technologies IRLZ24NSTRLPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 3.8W (Ta), 45W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 18A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 15nC @ 5V
  • Maximum Input Capacitance: 480pF @ 25V
  • Maximum Rds On @ Id,Vgs: 60 mOhm @ 11A, 10V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Product Status: Active
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2435 $55.9575
100+ $1.0204 $102.0400
155+ $0.9885 $153.2175
210+ $0.9566 $200.8860
275+ $0.9247 $254.2925
365+ $0.8290 $302.5850
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