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IRS2005MTRPBF

Part No IRS2005MTRPBF
Manufacturer Infineon Technologies
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 14MLPQ
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Estimated Pruduction Lead Time 38 Weeks
Features Half-Bridge Gate Driver IC Non-Inverting 14-MLPQ (4x4)
Manufacturer Infineon Technologies
Package Reel - TR
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Surface Mount
Package 14-VFQFN Exposed Pad
Case / Package 14-MLPQ (4x4)
Family Name IRS2005
MSL Level 2 (1 Year)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Other Part Number IRS2005MTRPBFTR, IRS2005MTRPBFCT, SP001534270, IRS2005MTRPBFDKR
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 921557-IRS2005MTRPBF
Ultra Librarian 3D Model Ultra Librarian IRS2005MTRPBF CAD Model

Description

The IRS2005MTRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon Technologies. This driver is designed to drive N-channel MOSFETs and IGBTs in half-bridge configurations. It features a floating channel bootstrap driver capable of operating up to 200V. The device incorporates advanced features such as undervoltage lockout (UVLO) and matched propagation delay for both high-side and low-side channels.

Applications:

      
  • Half-Bridge Converters
  •   
  • Motor Drives
  •   
  • HID Ballast
  •   
  • Power Supplies
  •   
  • Class D Audio Amplifiers

Features:

      
  • Floating Channel Designed for Bootstrap Operation: Simplifies high-side gate drive implementation.
  •   
  • 200V Tolerant: High voltage rating enables use in a wide range of applications.
  •   
  • Matched Propagation Delay for Both Channels: Minimizes dead-time requirements and improves efficiency.
  •   
  • Undervoltage Lockout (UVLO): Protects the MOSFETs/IGBTs from operating with insufficient gate voltage.
  •   
  • Logic Input Compatibility: Direct interface with microcontrollers and DSPs.
  •   
  • CMOS Schmitt-triggered Inputs with Pull-down: Improves noise immunity and simplifies interfacing.

Benefits:

      
  • Simplified Design: Integrated bootstrap diode and other features reduce external component count and simplify circuit design.
  •   
  • Increased Efficiency: Matched propagation delay and optimized gate drive minimize switching losses.
  •   
  • Improved Reliability: UVLO and other protection features prevent device damage and ensure robust operation.
  •   
  • Reduced EMI: Optimized switching characteristics minimize electromagnetic interference.
  •   
  • Compact Solution: Available in a small package for space-constrained applications.

Additional Details:

The IRS2005MTRPBF typically features a supply voltage range of 10V to 20V and is capable of driving high-side and low-side MOSFETs/IGBTs with gate charge up to several nC. The bootstrap capacitor voltage is typically limited to a maximum of 200V. It is available in a SOIC or similar surface-mount package. This gate driver is designed for high-speed switching applications, enabling efficient operation of power converters and motor drives.

The device is RoHS compliant, ensuring environmental friendliness and adherence to industry regulations. It is designed for optimal performance in high-frequency switching applications, offering a balance of speed, efficiency, and protection features.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5657 $54.7995
80+ $1.2847 $102.7760
125+ $1.2446 $155.5750
170+ $1.2044 $204.7480
215+ $1.1643 $250.3245
290+ $1.0438 $302.7020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,680 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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