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ISC010N04NM6ATMA1

Part No ISC010N04NM6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™ 6
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 285A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 747µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 20 V
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
Base Product Number ISC010N
Other Names SP005400463,448-ISC010N04NM6ATMA1DKR,448-ISC010N04NM6ATMA1CT,448-ISC010N04NM6ATMA1TR
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278305-ISC010N04NM6ATMA1
Ultra Librarian 3D Model Ultra Librarian ISC010N04NM6ATMA1 CAD Model

Description

The Infineon Technologies OptiMOS™ 6 MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of applications.

  • Drain-Source Voltage: 40V
  • Continuous Drain Current @ 25°C: 40A
  • Gate-Source Threshold Voltage: 2.8V @ 747μA
  • Maximum Gate Charge: 83nC @ 10V
  • Package: PG-TDSON-8 FL
  • Power Dissipation: 3W (Ta) and 150W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Production Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,286 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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