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ISC0804NLSATMA1

Part No ISC0804NLSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A/59A TDSON-8 / N-Channel 100 V 12A (Ta), 59A (Tc) 2.5W (Ta), 60W (Tc) Surface Mount PG-TDSON-8
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) , 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta) , 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Base Product Number ISC0804N
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339639-ISC0804NLSATMA1
Ultra Librarian 3D Model Ultra Librarian ISC0804NLSATMA1 CAD Model

Description

The ISC0804NLSATMA1 is a part of the OptiMOS 5 series and is designed for use in discrete semiconductor products.

  • Series: OptiMOS 5
  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 100V
  • Power Dissipation: 2.5W
  • Gate-Source Voltage (Max): ±20V
  • Package Type: 8-PowerTDFN
  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1526 $51.8670
110+ $0.9458 $104.0380
165+ $0.9162 $151.1730
230+ $0.8867 $203.9410
295+ $0.8571 $252.8445
395+ $0.7684 $303.5180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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