The Fairchild/ON Semiconductor FDP2614 is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 62A at 25°C. It has a maximum power dissipation of 260W (Tc) and a maximum Rds On of 27 mOhm @ 31A, 10V. The FDP2614 is designed for use in power management applications and is packaged in a TO-220-3 package.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 200V
• Continuous Drain Current: 62A @ 25°C
• Maximum Power Dissipation: 260W (Tc)
• Package: TO-220-3
• Maximum Rds On: 27 mOhm @ 31A, 10V
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Gate Charge: 99nC @ 10V