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ISZ065N03L5SATMA1

Part No ISZ065N03L5SATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 15 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
Base Product Number ISZ065
Other Names 448-ISZ065N03L5SATMA1TR,448-ISZ065N03L5SATMA1DKR,448-ISZ065N03L5SATMA1CT,SP005408599
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278278-ISZ065N03L5SATMA1
Ultra Librarian 3D Model Ultra Librarian ISZ065N03L5SATMA1 CAD Model

Description

The Infineon Technologies ISZ065N03L5SATMA1 MOSFET is a single N-channel FET with a maximum drain to source voltage of 30V and a continuous drain current of 12A @ 25°C (40A @ Tc).

  • Maximum Rds On: 6.5mOhm @ 20A and 10V
  • Maximum Vgs(th): 2V @ 250μA
  • Gate Charge: 10nC @ 10V
  • Input Capacitance: 670pF @ 15Vds
  • Series: OptiMOS™
  • Package: 8-PowerTDFN package
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4918 $51.6390
250+ $0.4035 $100.8750
385+ $0.3909 $150.4965
530+ $0.3783 $200.4990
685+ $0.3657 $250.5045
915+ $0.3279 $300.0285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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