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Same model may have multiple batches, images only for reference.
JANSR2N7464T2
Same model may have multiple batches, images only for reference.

JANSR2N7464T2

Part No JANSR2N7464T2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package, TO-205AF-3
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Continuous Drain Current (ID) 1.6 A
Drain to Source Breakdown Voltage 500 V
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 125 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Packaging Bulk
Power Dissipation 25 W
Radiation Hardening Yes
RoHS Non-Compliant
Win Source Part Number 1222360-JANSR2N7464T2
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANSR2N7464T2 CAD Model

Description

The Infineon JANSR2N7464T2 is an RF MOSFET transistor that is part of the Transistors - FETs, MOSFETs - RF category. It is packaged in bulk and is mounted through hole.

  • Manufacturer:Infineon Technologies
  • Category: Transistors - FETs, MOSFETs - RF
  • Mounting Type: Through Hole
  • Package: Bulk
  • Continuous Drain Current: 1.6A
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Power Dissipation: 25W
  • Application: RF power amplifiers and switching applications
  • RoHS Compliance: Non-compliant

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