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Same model may have multiple batches, images only for reference.
JANTX2N6782
Same model may have multiple batches, images only for reference.

JANTX2N6782

Part No JANTX2N6782
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-39
Continuous Drain Current (ID) 2.3 A
Drain to Source Breakdown Voltage 100 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 125 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
On-State Resistance 600 mΩ
Packaging Bulk
Power Dissipation 15 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Win Source Part Number 1003170-JANTX2N6782
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian JANTX2N6782 CAD Model

Description

The JANTX2N6782 is a RF MOSFET transistor designed for use in discrete semiconductor products.

  • Continuous Drain Current (ID): 2.3A
  • Drain to Source Breakdown Voltage: 100V
  • On-State Resistance: 600 mΩ
  • Gate to Source Voltage (Vgs): 20V
  • Temperature Range: -55°C to 125°C
  • Package: TO-39

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $33.6957 $67.3914
4+ $31.5217 $126.0868
5+ $30.4348 $152.1740
8+ $28.2609 $226.0872
10+ $27.1739 $271.7390
12+ $26.0870 $313.0440
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Availability: 247 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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