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Same model may have multiple batches, images only for reference.
MMBT2222ALT1HTSA1 Real Image
Same model may have multiple batches, images only for reference.

MMBT2222ALT1HTSA1

Part No MMBT2222ALT1HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Datasheet
MMBT2222ALT1HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Infineon Technologies
Package Tape & Reel
Product Status Not For New Designs
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 330 mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Base Product Number MBT2222A
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1315502-MMBT2222ALT1HTSA1
Ultra Librarian 3D Model Ultra Librarian MMBT2222ALT1HTSA1 CAD Model

Description

The MMBT2222ALT1HTSA1 is an NPN bipolar transistor.

  • Collector-Emitter Breakdown Voltage: 40V (Maximum)
  • Collector Current: 600mA (Maximum)
  • Power Dissipation: 330mW
  • DC Current Gain: 100 @ 150mA collector current and 10V collector-emitter voltage
  • Frequency Transition: 300MHz
  • Package: Tape and Reel
  • Supplier Device Package: PG-SOT23
  • Operating Temperature Range: 150°C

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