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Same model may have multiple batches, images only for reference.
MMBT3906LT1HTSA1 Real Image
Same model may have multiple batches, images only for reference.

MMBT3906LT1HTSA1

Part No MMBT3906LT1HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A SOT-23
Datasheet
MMBT3906LT1HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 115237-MMBT3906LT1HTSA1
Ultra Librarian 3D Model Ultra Librarian MMBT3906LT1HTSA1 CAD Model

Description

Infineon Technologies has developed a PNP transistor in the Discrete Semiconductor Products category.

  • Maximum collector-emitter breakdown voltage: 40V
  • Maximum current collector: 200mA
  • Maximum power dissipation: 330mW
  • Typical gain (hFE) (Min): 100 @ 10mA, 1V
  • Frequency transition: 250MHz
  • Collector cut-off current (Max): 50nA (ICBO)
  • Packaging: PG-SOT23-3 case
  • Operating temperature range: 150°C (TJ)

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