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Same model may have multiple batches, images only for reference.
SGB15N120ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SGB15N120ATMA1

Part No SGB15N120ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 30A 198W TO263-3 / IGBT NPT 1200 V 30 A 198 W Surface Mount PG-TO263-3-2
Datasheet
SGB15N120ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Last Time Buy
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 52 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Power - Max 198 W
Switching Energy 1.9mJ
Input Type Standard
Gate Charge 130 nC
Td (on/off) @ 25°C 18ns/580ns
Test Condition 800V, 15A, 33Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number SGB15N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000012560,SGB15N120-ND,SGB15N120,SGB15N120ATMA1TR,INFINFSGB15N120ATMA1,2156-SGB15N120ATMA1
Standard Package 1,000
Win Source Part Number 997785-SGB15N120ATMA1
Ultra Librarian 3D Model Ultra Librarian SGB15N120ATMA1 CAD Model

Description

The SGB15N120ATMA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power applications.

  • IGBT Type: NPT
  • Voltage Collector Emitter Breakdown: 1200V
  • Maximum Collector Current: 30A
  • Maximum Power: 198W
  • Switching Energy: 1.9mJ
  • Gate Charge: 130nC
  • Switching Time: 18ns/580ns @ 25°C
  • Package: TO-263-3, D²Pak
  • Operating Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
40+ $1.4478 $57.9120
100+ $1.1880 $118.8000
155+ $1.1508 $178.3740
210+ $1.1138 $233.8980
270+ $1.0766 $290.6820
360+ $0.9653 $347.5080
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