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SI4435DYPBF Real Image SI4435DYPBF Real Image
Same model may have multiple batches, images only for reference.
SI4435DYPBF Real Image SI4435DYPBF Real Image
SI4435DYPBF Real Image SI4435DYPBF Real Image
Same model may have multiple batches, images only for reference.

SI4435DYPBF

Part No SI4435DYPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8A 8-SOIC
Datasheet
SI4435DYPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2320pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095943-SI4435DYPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4435DYPBF CAD Model

Description

The Infineon Technologies SI4435DYPBF MOSFET is a P-channel polarity, surface-mount device with a drain-source breakdown voltage of 30V and a continuous drain current of 8A @ 25°C.

  • Power Dissipation: 2.5W (Ta)
  • Maximum Rds On: 20 mOhm @ Id,Vgs of 8A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 2320pF @ 15V

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Quantity Unit Price Ext. Price
35+ $1.6015 $56.0525
80+ $1.3141 $105.1280
120+ $1.2730 $152.7600
165+ $1.2320 $203.2800
210+ $1.1909 $250.0890
285+ $1.0677 $304.2945
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MOQ: 40 pcs
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