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Same model may have multiple batches, images only for reference.
SMBT3904SE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

SMBT3904SE6327HTSA1

Part No SMBT3904SE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 40V 0.2A SOT363
Datasheet
SMBT3904SE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1097896-SMBT3904SE6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMBT3904SE6327HTSA1 CAD Model

Description

The Infineon Technologies SMBT3904SE6327HTSA1 is a dual NPN transistor that is designed for use in a variety of applications.

  • Frequency Transition: 300MHz
  • Mounting Technology: SMD (SMT)
  • Product Category: Discrete Semiconductor Products
  • Product Status: Obsolete (EOL)
  • Case/Package: PG-SOT363-6
  • Maximum Current Collector: 200mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
  • Max Vce (sat): 300mV @ 5mA, 50mA
  • Collector Cut-Off Current (max): 50nA (ICBO)
  • Typical Gain (hFE) (min): 100 @ 10mA, 1V
  • Maximum Power Dissipation: 330mW
  • Supply and Demand Status: balanced

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